时 间：2023年5月17日（周三）上午10:00

地 点：js33333线路登录樱顶老图书馆

主讲人：John Robertson教授英国皇家科学院/工程院院士

题 目：Metal Silicide/Si interfaces: Contact Resistances and Origin of Fermi Level Depinning

主讲人简介：

John Robertson（生于1950年）是剑桥大学工程系的电子学教授。他是电子材料方面的专家。John Robertson教授从事开创性工作，开发具有工业价值的电子材料，例如HfO₂（二氧化铪）、类金刚石碳(DLC)和碳纳米管。他对HfO₂导带偏移的预测使其能够取代SiO₂（二氧化硅）作为互补金属氧化物半导体(CMOS)晶体管中的栅极氧化物，从而继续CMOS尺寸微缩。他对高k材料缺陷性质以及与金属的界面接触的进一步研究使高k材料得以成功实施。他在DLC沉积工艺和表征方面的工作促成了最薄、最光滑的保护膜的开发，以及硬盘驱动器内存密度的持续扩展。

Robertson教授1971年本科毕业于剑桥大学物理专业，1975年在剑桥大学获博士学位。他的博士学位是非晶半导体中电子态的研究。1975年至1994年，他在Central Electricity Generating Board工作，之后于1994年加入剑桥大学工程系。

Robertson教授于2015年入选英国皇家科学院院士（FRS），于2020年入选英国皇家工程院院士（FREng）。同时，他是美国物理学会、电气和电子工程师学会（IEEE）和材料研究学会的会士，也是《钻石及相关材料》杂志的名誉编辑。他因在半导体上集成高k氧化物方面的理论贡献而于2023年获得IEEE Cledo Brunetti奖。

Brief Introduction of Professor John Robertson

John Robertson FRS (born 1950) is a Professor of Electronics, in the Department of Engineering at the University of Cambridge. Professor Robertson is an expert in electronic materials. He has undertaken seminal work to develop industrially valuable electronic materials such as HfO₂(Hafnium dioxide), diamond-like carbon (DLC) and carbon nanotubes. His prediction of the conduction band offset of HfO₂allowed it to replace SiO₂(Silicon dioxide) as the gate oxide in complementary metal oxide semiconductor (CMOS) transistors, and so to continue CMOS scaling. His further work on its defects and interfaces with metals allowed its successful implementation. His work on the deposition process and characterisation of DLC allowed the development of the thinnest and smoothest protective films, and the continued scaling of hard-disk drive memory densities.

Professor Robertson graduated from University of Cambridge in Physics in 1971 and with a PhD in 1975. His PhD was the research on electronic states in amorphous semiconductors. He then worked for the Central Electricity Generating Board from 1975 to 1994, before joining the Department of Engineering at Cambridge in 1994.

Robertson was elected a Fellow of the Royal Society (FRS) in 2015 and a Fellow of the Royal Academy of Engineering (FREng) in 2020. He was also a Fellow of the American Physical Society(APS), the Institute of Electrical and Electronics Engineers (IEEE) and the Materials Research Society (MRS), and an Emeritus Editor of the journal Diamond and Related Materials. He was awarded the IEEE Cledo Brunetti Award in 2023 for theoretical contributions to the integration of high-k oxides on semiconductors.